GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

Mitsubishi Electric Corporation will begin shipping samples of a new 16W-average-power GaN power amplifier module (PAM) for ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging ...

The offering of fully decommissioned, ready-to-ship manufacturing assets from Endicott-based Ubiquity Solar—with nearly 600 ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

“Our work demonstrates that high-performance, stable solar water splitting can be achieved using low-cost, scalable organic materials,” said Flurin Eisner, Lecturer in Green Energy at Queen Mary ...

Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...

Researchers from the National Renewable Energy Laboratory (NREL), the Colorado School of Mines, and Oak Ridge National Laboratory have examined a potential route to achieve peak performance of Al x Ga ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

One promising application for chiral semiconductors is in display technology. Current displays often waste a significant ...

Navitas Semiconductor has announced what it believes are the world’s first production-released 650 V bi-directional GaNFast ...