A new broadband anti-reflection coated InGaAs/InP photodiode demonstrates less than 0.5% typical optical reflectance from 1520 to 1620 nm. This reflectance over the L and C band wavelength range was ...
BRIDGEWATER, N.J., Nov. 4, 2019 /PRNewswire/ -- Hamamatsu launched the C15333-10E InGaAs line scan camera for inline nondestructive inspection using SWIR (short-wavelength infrared) imaging. Joining ...
Phlux Technology, a spin-out from Sheffield University, UK, designs, manufactures, and markets 1,550-nm infrared (IR) sensors that are up to 12X more sensitive than alternative solutions. As a result, ...
Marktech’s new 2.6µm InGaAs photodiode detectors in a hermetic TO metal can packages The spectral responsivity of Marktech's new 2.6µm InGaAs photodiodes Marktech Optoelectronics a Leading ...
Hamamatsu Photonics is pleased to announce the launch of its latest InGaAs Photodiodes (PD) series designed for longer wavelengths. The G1719X series are near-infrared sensors offering high ...
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