NXP has underpinned its leadership in radio frequency with highly advanced QUBIC4 BiCMOS silicon technology, delivering higher levels of integration and performance at high frequencies, all in a cost ...
In this work, we present the effect of self-mixing in compact terahertz emitters implemented in a 130 nm SiGe BiCMOS technology. The devices are based on a differential Colpitts oscillator topology ...
MIGDAL HAEMEK, Israel & NEWPORT BEACH, Calif., May 10, 2010 (BUSINESS WIRE) -- TowerJazz, the global specialty foundry leader, today announced design kit availability for its next-generation 130nm ...
Jazz Offers Cost-Effective 0.13-micron SiGe BiCMOS Process Platform with 200GHz Transistors for Highest Performance System-on-Chip (SoC) Applications NEWPORT BEACH, Calif., April 11, 2007 -- Jazz ...
Selecting a silicon technology that deviates from today's mainstream CMOS foundry road maps may appear, at first glance, to be a risky proposition. While conventional wisdom states that standard CMOS ...
Targeting high frequency radio applications, NXP Semiconductors today announced the launch of a series of new products developed in the latest SiGe (silicon-germanium) process technology. Addressing ...
Today at its annual Technology Summit in California, GlobalFoundries (GF)(Nasdaq: GFS) announced the production release of its 130nm complementary Bi-CMOS (CBIC) platform, the company’s ...
The monolithic integration of RF-MEMS with SiGe-BiCMOS technology opens the door to the creation of low-cost, highly integrated circuits. From there, the technology can power radar and imaging ...
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