This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

If you ever work with a circuit that controls a decent amount of current, you will often encounter a FET – a Field-Effect Transistor. Whether you want to control a couple of powerful LEDs, switch a ...

In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...

* The transition to 3-D continues the pace of technology advancement, fueling Moore’s Law for years to come. * An unprecedented combination of performance improvement and power reduction to enable new ...

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...

There's been no greater act of magic in technology than the sleight of hand performed by Moore's Law. Electronic components that once fit in your palm have long gone atomic, vanishing from our world ...

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...

While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...