The term "ALD" was first used around 2000. This technique achieves atomic layer control and conformal deposition through successive, self-limiting surface reactions. It involves introducing chemical ...

Atomic layer deposition (ALD) used to be considered too slow to be of practical use in semiconductor manufacturing, but it has emerged as a critical tool for both transistor and interconnect ...

Atomic layer deposition (ALD) originated from atomic layer epitaxy, which was introduced in 1970 and initially used in electroluminescent displays. It rapidly revolutionized semiconducting ...